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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200208 Issued Date : 1993.06.23 Revised Date : 2004.09.08 Page No. : 1/4
HMBTA44
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBTA44 is designed for application requires high voltage.
Features
* High voltage: VCEO=400V(min) at IC=1mA * High current: IC=300mA at 25C * Complementary with HMBTA94
SOT-23
Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TA=25C) ............................................................................................................... 350 mW * Maximum Voltages and Currents (TA=25C) VCBO Collector to Base Voltage ......................................................................................................................... 450 V VCEO Collector to Emitter Voltage ...................................................................................................................... 400 V VEBO Emitter to Base Voltage ................................................................................................................................ 6 V IC Collector Current ........................................................................................................................................ 300 mA
Electrical Characteristics (TA=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *hFE1 *hFE2 *hFE3 *hFE4 Cob Min. 450 400 6 40 50 45 40 Typ. 4 Max. 100 100 500 400 500 750 750 300 6 pF Unit V V V nA nA nA mV mV mV mV IC=100uA IC=1mA IE=10uA VCB=400V VEB=4V VCE=400V IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCB=20V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Test Conditions
HMBTA44
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
Spec. No. : HN200208 Issued Date : 1993.06.23 Revised Date : 2004.09.08 Page No. : 2/4
Saturation Voltage & Collector Current
1000 VCE(sat) @ IC=10IB
125 C 100
o
Saturation Voltage (mV)
hFE
75 C
o
25 C
o
125 C 75 C 100 25 C
o o
o
hFE @ VCE=10V 10
1 1 10 100 1000
10 0.1 1 10 100 1000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
1000
o
Capacitance & Reverse-Biased Voltage
100
25 C
Saturation Voltage (mV)
75 C
o
125 C VBE(sat) @ IC=10IB
Capacitance (pF)
o
10
Cob
100 0.1 1 10 100 1000
Collector Current-IC (mA)
1 0.1
1
10
100
Reverse-Biased Voltage (V)
HMBTA44
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A L
Spec. No. : HN200208 Issued Date : 1993.06.23 Revised Date : 2004.09.08 Page No. : 3/4
3
3
Z
Pb Free Mark
Pb-Free: " " (Note) Normal: None
BS
1 2
Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Base 2.Emitter 3.Collector Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
V
G
DIM A B C D G H J K L S V
Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25
Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65
*: Typical, Unit: mm
C D H
3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N
K
J
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HMBTA44
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : HN200208 Issued Date : 1993.06.23 Revised Date : 2004.09.08 Page No. : 4/4
Critical Zone TL to TP
Tsmin tS Preheat
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes
o o o
Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes
Peak temperature 245 C 5 C
o o
Dipping time 5sec 1sec 5sec 1sec
260 C +0/-5 C
o
o
HMBTA44
HSMC Product Specification

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